Datasheet Details
| Part number | 2SD2593 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.97 KB |
| Description | NPN Transistor |
| Download | 2SD2593 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD2593 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.97 KB |
| Description | NPN Transistor |
| Download | 2SD2593 Download (PDF) |
|
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·Low Collector Saturation Voltage- : VCE(sat)= 1.2 (Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 2 W 35 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2593 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2593 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-Emitter Breakdown Voltage IC=30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
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| 2SD2551 | NPN Transistor |
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| 2SD2557 | NPN Transistor |
| 2SD2558 | NPN Transistor |