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2SD492 - NPN Transistor

General Description

Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A 100% avalanche tested

and reliable operation.

Designed for gen

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Power Transistor isc Product Specification 2SD492 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.