2SD570 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min.) Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max.)@IC= 2A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio and general purpose applications.

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2SD570 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD570
Manufacturer	Inchange Semiconductor
File Size	213.54 KB
Description	NPN Transistor
Datasheet	2SD570 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD570 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max.)@IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.