2SD612 Datasheet PDF (NPN Transistor) | Download INCHANGE 2SD612

2SD612 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V(Min.) High Collector Dissipation Wide Area of Safe Operation Complement to Type 2SB632 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power a

Datasheet Details

Part number	2SD612
Manufacturer	INCHANGE
File Size	210.08 KB
Description	NPN Transistor
Datasheet	2SD612 Datasheet
Additional preview pages of the 2SD612 datasheet.

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Full PDF Text Transcription

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isc Silicon NPN Power Transistor 2SD612 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V(Min.) ·High Collector Dissipation ·Wide Area of Safe Operation ·Complement to Type 2SB632 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3 A 10 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.

Published: Sep 21, 2020 |