| Part number | 2SD612 |
|---|---|
| Datasheet | 2SD612-INCHANGE.pdf |
| File Size | 210.08 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V(Min.) ·High Collector Dissipation ·Wide Area of Safe Operation ·plement to Type 2SB632 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD612 TC=25℃ unless otherwise specified SYMBOL...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD612 | PNP/NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
 |
2SD612 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD612K | PNP/NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
|
2SD612K | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD613 | NPN Transistor |
| 2SD617 | NPN Transistor |
| 2SD60 | NPN Transistor |
| 2SD600 | NPN Transistor |
| 2SD600K | NPN Transistor |
| 2SD605 | NPN Transistor |
| 2SD608 | NPN Transistor |
| 2SD627 | NPN Transistor |
| 2SD628 | Silicon NPN Darlington Power Transistor |
| 2SD632 | NPN Transistor |
