Datasheet4U Logo Datasheet4U.com

2SD705 - NPN Transistor

General Description

Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver General purpose power

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD700 NPN Transistor Toshiba
2SD703A Power Transistors Mospec Semiconductor
2SD711 NPN Power Transistor Fuji
2SD716 NPN Transistor Toshiba
2SD716 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD706 NPN Transistor
2SD711 NPN Transistor
2SD715 NPN Transistor
2SD716 NPN Transistor
2SD717 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD705 DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 600 UNIT V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 10 V IC Collector Current IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 8 A 1 A 80 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.