| Part number | 2SD716 |
|---|---|
| Datasheet | 2SD716-INCHANGE.pdf |
| File Size | 215.38 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V (Max)@IC= 4A ·plement to Type 2SB686 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Remended for 30~35W high-fidelity audio frequency amplifier output stage.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD716 | NPN Transistor | Toshiba |
 |
2SD716 | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD711 | NPN Transistor |
| 2SD715 | NPN Transistor |
| 2SD717 | NPN Transistor |
| 2SD718 | NPN Transistor |
| 2SD705 | NPN Transistor |
| 2SD706 | NPN Transistor |
| 2SD723 | NPN Transistor |
| 2SD725 | NPN Transistor |
| 2SD726 | Silicon NPN Power Transistor |
| 2SD727 | NPN Transistor |
