| Part number | 2SD718 |
|---|---|
| Datasheet | 2SD718-INCHANGE.pdf |
| File Size | 214.83 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD718 | NPN EPITAXIAL SILICON TRANSISTOR | UTC |
 |
2SD718 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SD718 | Silicon NPN Transistor | Toshiba |
 |
2SD718 | Silicon NPN Triple Diffused Transistor | JILIN SINO |
|
2SD718A | Silicon NPN Triple Diffused Transistor | JILIN SINO |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD711 | NPN Transistor |
| 2SD715 | NPN Transistor |
| 2SD716 | NPN Transistor |
| 2SD717 | NPN Transistor |
| 2SD705 | NPN Transistor |
| 2SD706 | NPN Transistor |
| 2SD723 | NPN Transistor |
| 2SD725 | NPN Transistor |
| 2SD726 | Silicon NPN Power Transistor |
| 2SD727 | NPN Transistor |
