Datasheet Details
| Part number | 2SD727 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.71 KB |
| Description | NPN Transistor |
| Download | 2SD727 Download (PDF) |
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| Part number | 2SD727 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.71 KB |
| Description | NPN Transistor |
| Download | 2SD727 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB691 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD727 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD727.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD727 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD723 | NPN Transistor |
| 2SD725 | NPN Transistor |
| 2SD726 | Silicon NPN Power Transistor |
| 2SD728 | NPN Transistor |
| 2SD705 | NPN Transistor |
| 2SD706 | NPN Transistor |
| 2SD711 | NPN Transistor |
| 2SD715 | NPN Transistor |
| 2SD716 | NPN Transistor |
| 2SD717 | NPN Transistor |