Datasheet4U Logo Datasheet4U.com

2SD818 - Silicon NPN Power Transistor

Description

High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) Low Collector Saturation Voltage High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for color TV horizontal output applications.

📥 Download Datasheet

Datasheet preview – 2SD818

Datasheet Details

Part number 2SD818
Manufacturer Inchange Semiconductor
File Size 203.16 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2SD818 Datasheet
Additional preview pages of the 2SD818 datasheet.

📁 Similar Datasheet

  • 2SD818 - NPN Transistor (Toshiba)
  • 2SD811 - Silicon NPN Transistor (Toshiba)
  • 2SD813 - Si NPN Transistor (Panasonic Semiconductor)
  • 2SD814 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD814A - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD817 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD819 - NPN Transistor (Toshiba)
  • 2SD809 - NPN Transistor (ETC)
  • 2SD820 - NPN Transistor (Toshiba)
  • 2SD820 - SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor 2SD818 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·Low Collector Saturation Voltage·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.5 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2.5 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.
Published: |