Datasheet Details
| Part number | 2SD818 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.16 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD818-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD818.
| Part number | 2SD818 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.16 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD818-INCHANGE.pdf |
|
|
|
·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·Low Collector Saturation Voltage·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.5 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2.5 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD818 | NPN Transistor | Toshiba |
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