900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

2SD818 Datasheet Preview

2SD818 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
2SD818
DESCRIPTION
·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1500V (Min.)
·Low Collector Saturation Voltage-
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2.5
A
IE
Emitter Current-Continuous
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
2.5
A
50
W
150
Tstg
Storage Temperature Range
-65~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SD818 Datasheet Preview

2SD818 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V
tf
Fall Time
ICP= 2A; IB1(end)= 0.6A
2SD818
MIN TYP. MAX UNIT
4.0 8.0
V
1.5
V
10 μA
1.0 mA
8
20
95
pF
3
MHz
0.5 1.0 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SD818
Description Silicon NPN Power Transistor
Maker INCHANGE
PDF Download

2SD818 Datasheet PDF






Similar Datasheet

1 2SD811 Silicon NPN Transistor
Toshiba
2 2SD811 NPN Transistor
INCHANGE
3 2SD812 NPN Transistor
INCHANGE
4 2SD813 Si NPN Transistor
Panasonic Semiconductor
5 2SD814 Silicon NPN Transistor
Panasonic Semiconductor
6 2SD814A Silicon NPN Transistor
Panasonic Semiconductor
7 2SD817 SILICON POWER TRANSISTOR
SavantIC
8 2SD817 NPN Transistor
INCHANGE
9 2SD818 NPN Transistor
Toshiba





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy