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2SD833 - Silicon NPN Darlington Power Transistor

General Description

High DC Current Gain- : hFE= 4000(Min) @IC= 3A Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @ IC= 3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifiers Relay& solenoid drivers Motor control

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isc Silicon NPN Darlington Power Transistor 2SD833 DESCRIPTION ·High DC Current Gain- : hFE= 4000(Min) @IC= 3A ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifiers ·Relay& solenoid drivers ·Motor controls ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO(SUS) Collector-Emitter Voltage 50 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.