High Breakdown Voltage-
: VCBO= 1500V (Min)
High Switching Speed
Low Collector Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 4.5A
Built-in Damper Diode
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD900
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 4.5A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in color TV deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage
1500
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
5
A
ICM
Collector Current- Peak
PC
Collector Power Dissipation @ TC= 25℃
TJ
Junction Temperature
6
A
50
W
150
℃
Tstg
Storage Temperature Range
-45~150
℃
isc website：www.iscsemi.
2SD900 Datasheet
