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2SD920 - NPN Transistor

General Description

High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 200V(Min) Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for series regul

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD920 DESCRIPTION ·High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 200V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for series regulators ,color TV, power supplies and similar devices applications.