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2SD929 - NPN Transistor

General Description

High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 180V(Min) High Reliability Good Linearity of hFE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD929 DESCRIPTION ·High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 180V(Min) ·High Reliability ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color & B/W TV power supply ·Active power filter ·Series regulators ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.