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2SK1105 - N-Channel MOSFET

Description

Drain Current ID=3A@ TC=25℃ Drain Source Voltage- : VDSS=800V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators, UPS,DC-DC converters , general purpose power am

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulators, UPS,DC-DC converters , general purpose power amplifier applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 3 A IDM Drain Current-Single Plused 12 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
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