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2SK1162 - N-Channel MOSFET

Datasheet Summary

Features

  • With TO-3PN packaging.
  • Low on-resistance.
  • Low drive current.
  • No secondary breakdown.
  • Easy to use.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operationz.

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Datasheet preview – 2SK1162

Datasheet Details

Part number 2SK1162
Manufacturer INCHANGE
File Size 205.76 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK1162 Datasheet
Additional preview pages of the 2SK1162 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK1162 ·FEATURES ·With TO-3PN packaging ·Low on-resistance ·Low drive current ·No secondary breakdown ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·DC-DC converters ·Uninterruptible power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 30 PD Total Dissipation 100 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Cha
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