Datasheet Details
| Part number | 2SK1180 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 260.37 KB |
| Description | N-Channel MOSFET |
| Datasheet | 2SK1180-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor 2SK1180.
| Part number | 2SK1180 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 260.37 KB |
| Description | N-Channel MOSFET |
| Datasheet | 2SK1180-INCHANGE.pdf |
|
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·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for low voltage,high speed applications, ·Chopper regulator,DC-DC converter and motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 10 A Ptot Total Dissipation@TC=25℃ 85 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.47 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
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