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isc N-Channel MOSFET Transistor
2SK1180
DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed especially for low voltage,high speed applications, ·Chopper regulator,DC-DC converter and motor drive
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
10
A
Ptot
Total Dissipation@TC=25℃
85
W
Tj
Max.
2SK1180 Datasheet
