Datasheet Details
| Part number | 2SK1917-M |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.01 KB |
| Description | N-Channel MOSFET |
| Download | 2SK1917-M Download (PDF) |
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| Part number | 2SK1917-M |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.01 KB |
| Description | N-Channel MOSFET |
| Download | 2SK1917-M Download (PDF) |
|
|
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·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·UPS ·DC-DC converters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 250 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 10 A IDM Drain Current-Single Plused 28 A Ptot Total Dissipation@TC=25℃ 50 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID=1mA VGS(th) Gate Threshold Voltage VDS= VGS;
isc N-Channel MOSFET Transistor 2SK1917-M.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SK1917-MR | N-CHANNEL SILICON POWER MOSFET | Fuji Electric |
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2SK1917 | N-CHANNEL SILICON POWER MOSFET | Fuji Electric |
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2SK1917 | N-Channel MOSFET Transistor | Inchange Semiconductor |
| Part Number | Description |
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