Datasheet Details
| Part number | 2SK1968 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.38 KB |
| Description | N-Channel MOSFET |
| Download | 2SK1968 Download (PDF) |
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Overview: isc N-Channel MOSFET Transistor 2SK1968.
| Part number | 2SK1968 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.38 KB |
| Description | N-Channel MOSFET |
| Download | 2SK1968 Download (PDF) |
|
|
|
·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Suitable for switching regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 12 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) 2SK1968 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 10μA V(BR)GSS Gate-Source Breakdown Voltage VDS= 0;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SK1968 | Silicon N-Channel MOSFET | Hitachi Semiconductor |
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