Datasheet Details
| Part number | 2SK2020-01MR |
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| Manufacturer | Inchange Semiconductor |
| File Size | 225.12 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 2SK2020-01MR Datasheet
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| Part number | 2SK2020-01MR |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 225.12 KB |
| Description | N-Channel MOSFET |
| Datasheet |
2SK2020-01MR Datasheet
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·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·UPS ·DC-DC converters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 3.5 A ID(puls) Pulsed drain current 14 A Ptot Total Dissipation@TC=25℃ 30 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4.17 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS;
isc N-Channel MOSFET Transistor 2SK2020-01MR.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SK2020-01MR | N-channel MOS-FET | Fuji Electric |
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2SK2020-01 | N-Channel MOSFET Transistor | Inchange Semiconductor |
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