Datasheet Details
| Part number | 2SK2050 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.79 KB |
| Description | N-Channel MOSFET |
| Download | 2SK2050 Download (PDF) |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 2SK2050 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.79 KB |
| Description | N-Channel MOSFET |
| Download | 2SK2050 Download (PDF) |
|
|
|
·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor control ·DC-DC converters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 30 A ID(puls) Pulsed Drain Current 120 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.56 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 75 ℃/W 2SK2050 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK2050 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0;
ID= 1mA VDS= VGS;
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