Datasheet Details
| Part number | 2SK2796L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 261.46 KB |
| Description | N-Channel MOSFET |
| Download | 2SK2796L Download (PDF) |
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Overview: isc N-Channel MOSFET Transistor 2SK2796L.
| Part number | 2SK2796L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 261.46 KB |
| Description | N-Channel MOSFET |
| Download | 2SK2796L Download (PDF) |
|
|
|
·DC/DC Converters ·DC/AC Inverters ·Motor Drives ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 16.9 A IDM Drain Current-Single Pluse 25 A PD Total Dissipation @TC=25℃ 41.7 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 10mA VGS(th) Gate Threshold Voltage VDS= VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SK2796L | Silicon N-Channel MOSFET | Hitachi Semiconductor |
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2SK2796 | Silicon N Channel MOS FET | Hitachi Semiconductor |
|
2SK2796S | Silicon N-Channel MOSFET | Hitachi Semiconductor |
 |
2SK2796S | Silicon N-Channel MOSFET | Kexin |
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