Datasheet Details
| Part number | 2SK529 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 235.57 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
 2SK529 Datasheet
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| Part number | 2SK529 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 235.57 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
2SK529 Datasheet
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·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 2 A Ptot Total Dissipation@TC=25℃ 30 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK529 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
isc N-Channel MOSFET Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SK529 | Transistor | Toshiba |
| Part Number | Description |
|---|---|
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