Datasheet Details
| Part number | 2SK899 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 229.19 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 2SK899 Datasheet
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| Part number | 2SK899 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 229.19 KB |
| Description | N-Channel MOSFET |
| Datasheet |
2SK899 Datasheet
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·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·UPS ·DC-DC converters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 18 A ID(puls) Pulsed Drain Current 72 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 35 ℃/W 2SK899 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK899 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID= 1mA VGS(TH) Gate Threshold Voltage VDS=10V;
isc N-Channel MOSFET Transistor.
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