2STP535FP
DESCRIPTION
- With TO-220F packaging
- Very high DC current gain
- Monolithic darlington transistor with integrated antiparallel collector-emitter diode
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- AC-DC motor control
- Electronic ignition
- Alternator regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICM
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak
Base Current- Continuous
Collector Power Dissipation
Tj
Max.Junction Temperature
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
-65~150 ℃
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.4 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website： .iscsemi.
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor isc Silicon NPN Darlington...
