900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

2STW100 Datasheet Preview

2STW100 Datasheet

NPN Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2STW100
DESCRIPTION
·With TO-3PN packaging
·Very high DC current gain
·Monolithic darlington transistor with integrated
antiparallel collector-emitter diode
·Complement to Type 2STW200
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·AC-DC motor control
·Electronic ignition
·Alternator regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
ICM
IB
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
80
V
80
V
5
V
25
A
40
A
6
A
PC
Collector Power Dissipation
Tj
Max.Junction Temperature
130
W
150
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
-65~150
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
0.96 /W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2STW100 Datasheet Preview

2STW100 Datasheet

NPN Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2STW100
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA, IB= 0
VCE(sat)1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 20mA
VCE(sat)2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 40mA
VCE(sat)3 Collector-Emitter Saturation Voltage IC= 20A ,IB= 80mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 20A ,IB= 80mA
VBE(on) Base-Emitter On Voltage
IC= 10A ; VCE= 3V
ICBO
Collector Cutoff Current
VCB=80V, IE= 0
ICEO
Collector Cutoff Current
VCE= 80V, IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 5A ; VCE= 3V
hFE-2
DC Current Gain
IC= 10A ; VCE= 3V
hFE-3
DC Current Gain
IC= 20A ; VCE= 3V
MIN
MAX UNIT
80
V
1.2
V
1.75
V
3.5
V
3.3
V
3.0
V
50
μA
50
μA
2
mA
600 15000
500 12000
300
6000
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2STW100
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
PDF Download

2STW100 Datasheet PDF





Similar Datasheet

1 2STW100 Power transistors
ST Microelectronics
2 2STW100 NPN Transistor
INCHANGE





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy