Download 30CTQ060 Datasheet PDF
Inchange Semiconductor
30CTQ060
FEATURES - Low forward voltage drop - Low Power Loss,high Efficiency - Guard ring for overvoltage protection - High Surge Capability,High Current Capability - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - For use inswitching power supplies, converters, free-wheeling diodes, and reverse battery protection. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage IF(AV) Average Rectified Forward Current VALUE UNIT IFSM Nonrepetitive Peak Surge Current Junction Temperature Tstg Storage Temperature Range dv/dt Voltage Rate of Change (Rated VR) -55~150 ℃ -55~150 ℃ 10000 V/μs isc website:.iscsemi. 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.63 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse...