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3CF20D - PNP Transistor

General Description

Large collector current Low collector saturation voltage High power dissipation

performance and reliable operation.

Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 3CF20D DESCRIPTION ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -20 A PC Collector Power Dissipation @TC=75℃ 200 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.75 ℃/W isc website:www.