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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
3CF20D
DESCRIPTION ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation.
APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-300
V
VCEO
Collector-Emitter Voltage
-250
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-20
A
PC
Collector Power Dissipation @TC=75℃ 200
W
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 0.75 ℃/W
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