Datasheet Details
| Part number | 3DA27C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.04 KB |
| Description | NPN Transistor |
| Datasheet | 3DA27C-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 3DA27C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.04 KB |
| Description | NPN Transistor |
| Datasheet | 3DA27C-INCHANGE.pdf |
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·With TO-3 ·High DC Current Gain- : hFE >10@IC= 1.5A ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 180V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation 50 W TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ 3DA27C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
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