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3DA608 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·High DC Current Gain- : hFE: 20-180@IC= 7.5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 3DA608A 3DA608B 3DA608C 3DA608D 3DA608E 3DA608F 3DA608A 3DA608B 3DA608C 3DA608D 3DA608E 3DA608F VEBO Emitter-Base Voltage VALUE 40 60 90 110 160 230 30 50 80 100 150 200 4 UNIT V V V ICM Pulsed Collector Current 10 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -55-175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.5 UNIT ℃/W 3DA608 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 3DA608 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC=10mA;

IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC=5A;IB=0.5A VBE(sat) Base-Emitter Saturation Voltage IC=5A;IB=0.5A 3DA608A 3DA608B 3DA608C 3DA608D 3DA608E 3DA608F 3DA608A 3DA608B 3DA608C 3DA608D 3DA608E 3DA608F 3DA608A 3DA608B 3DA608C 3DA608D 3DA608E 3DA608F ICBO Collector-Base Cutoff Current VCB=20V;

IE=0 MIN TYP MAX UNIT 30 50 80 100 V 150 200 1 0.5 0.5 0.5 V 0.5 0.5 2 1.4 1.4 1.4 V 1.4 1.4 2 mA ICEO Collector-Collector Cutoff Current VCE=20V;

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