3DD401
Description
Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150V(Min) - Wide Area of Safe Operation - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 3DD401
- Description: Silicon NPN Power Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 217.40 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 3DD4030A3 | Huajing Microelectronics | Silicon NPN bipolar transistor |