| Part number | 3DD401 |
|---|---|
| Datasheet | 3DD401-INCHANGE.pdf |
| File Size | 217.40 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Vertical output applications. IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.5mA;.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
3DD4013A1D | Silicon NPN Transistor | Huajing Microelectronics |
|
3DD4013A6D | Silicon NPN Transistor | Huajing Microelectronics |
|
3DD4013B1D | Silicon NPN Transistor | Huajing Microelectronics |
