3DD401 transistor equivalent, silicon npn power transistor.
*Power amplifier applications.
*Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMET.
*Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 150V(Min)
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Power amplifier applications.
*Vertical out.
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