Datasheet Details
| Part number | 3DD523 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.17 KB |
| Description | NPN Transistor |
| Datasheet | 3DD523-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | 3DD523 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.17 KB |
| Description | NPN Transistor |
| Datasheet | 3DD523-INCHANGE.pdf |
|
|
|
·Excellent safe operating area ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.52 ℃/W 3DD523 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA;
| Part Number | Description |
|---|---|
| 3DD5606 | NPN Transistor |
| 3DD5E | Silicon NPN Power Transistor |
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |
| 3DD100E | NPN Transistor |
| 3DD101C | NPN Transistor |
| 3DD101D | NPN Transistor |
| 3DD101E | NPN Transistor |