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3DD880 Datasheet Preview

3DD880 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistors
DESCRIPTION
·DC Current Gain -hFE = 60-300@ IC= 0.5A
·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 100V(Min)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation
TC=25
Tj
Junction Temperature
6
A
30
W
150
Tstg
Storage Ttemperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
4.16 /W
3DD880
isc Websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

3DD880 Datasheet Preview

3DD880 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 60V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V ; IC= 0
hFE
DC Current Gain
IC= 0.5A ; VCE= 15V
hFE Classifications
O
Y
GR
60-120 100-200 150-300
3DD880
MIN MAX UNIT
60
V
1.2
V
1.8
V
100 μA
100 μA
60
300
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc Websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 3DD880
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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