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3DD880 NPN Transistor

3DD880 Description

isc Silicon NPN Power Transistors .
DC Current Gain -hFE = 60-300@ IC= 0. Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min). Minimum Lot-to-Lot variations for r.

3DD880 Applications

* Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM

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Datasheet Details

Part number
3DD880
Manufacturer
INCHANGE
File Size
208.30 KB
Datasheet
3DD880-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 3DD880-like datasheet