Datasheet Summary
isc Silicon NPN Power Transistors
DESCRIPTION
- DC Current Gain -hFE = 60-300@ IC= 0.5A
- Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 100V(Min)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in general purpose amplifier and switching...