Datasheet Details
| Part number | 3DF1A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.24 KB |
| Description | NPN Transistor |
| Datasheet |
 3DF1A Datasheet
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| Part number | 3DF1A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.24 KB |
| Description | NPN Transistor |
| Datasheet |
3DF1A Datasheet
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·With TO-66 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A PD Total Power Dissipation@TC=75℃ 10 W TJ Max.Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 10 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DF1A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 1mA;
IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 1mA;
IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 0.5mA;
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part Number | Description |
|---|---|
| 3DF1B | NPN Transistor |
| 3DF1C | NPN Transistor |
| 3DF1D | NPN Transistor |
| 3DF1E | NPN Transistor |
| 3DF1F | NPN Transistor |
| 3DF20A | NPN Transistor |
| 3DF20B | NPN Transistor |
| 3DF20C | NPN Transistor |
| 3DF20D | NPN Transistor |
| 3DF20E | NPN Transistor |