With TO-66 packaging
Large collector current
Low collector saturation voltage
High power dissipation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in DC-DC converter
Driver of solenoid or motor
AB
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DF1E
DESCRIPTION ·With TO-66 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in DC-DC converter
·Driver of solenoid or motor
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
1.5
A
PD
Total Power Dissipation@TC=75℃
10
W
TJ
Max.
3DF1E Datasheet
