Datasheet Details
| Part number | 3DF5B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 254.67 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 3DF5B-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 3DF5B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 254.67 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 3DF5B-INCHANGE.pdf |
|
|
|
·With TO-3 packaging ·Excellent Safe Operating Area ·DC Current Gain- : hFE=15(Min)@IC = 2.5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current-Continuous 5.0 A PD Total Power Dissipation@TC=75℃ 50 W TJ Max.Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.0 ℃/W 3DF5B isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 3.0mA;
IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 3.0mA;
IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 1.0mA;
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| 3DF1B | NPN Transistor |
| 3DF1C | NPN Transistor |
| 3DF1D | NPN Transistor |
| 3DF1E | NPN Transistor |
| 3DF1F | NPN Transistor |
| 3DF20A | NPN Transistor |
| 3DF20B | NPN Transistor |
| 3DF20C | NPN Transistor |
| 3DF20D | NPN Transistor |