Datasheet Details
| Part number | 3DK104B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.99 KB |
| Description | NPN Transistor |
| Datasheet | 3DK104B-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification.
| Part number | 3DK104B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.99 KB |
| Description | NPN Transistor |
| Datasheet | 3DK104B-INCHANGE.pdf |
|
|
|
·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 3 A IB Base Current-Continuous 0.5 A PD Total Power Dissipation@TC=75℃ 10 W TJ Max.Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 10 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DK104B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 2mA;
IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 2mA;
IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 4mA;
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