Datasheet Details
| Part number | 3DK106 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.37 KB |
| Description | NPN Transistor |
| Datasheet |
 3DK106 Datasheet
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| Part number | 3DK106 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.37 KB |
| Description | NPN Transistor |
| Datasheet |
3DK106 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-200 V VCEO Collector-Emitter Voltage 50-200 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 7.5 A PC Collector Power Dissipation@TC=75℃ 50 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.0 ℃/W 3DK106 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=10mA;
isc Silicon NPN Power Transistor.
| Part Number | Description |
|---|---|
| 3DK104B | NPN Transistor |
| 3DK104C | NPN Transistor |
| 3DK104D | NPN Transistor |
| 3DK104E | NPN Transistor |
| 3DK104F | NPN Transistor |