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40N20 - N-Channel MOSFET Transistor

Features

  • Low RDS(on).
  • VGS Rated at ±20V.
  • Silicon Gate for Fast Switching Speed.
  • Rugged.
  • Low Drive Requirements.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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    isc N-Channel MOSFET Transistor INCHANGE Semiconductor 40N20 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Power switching applications ·Hard switched and high frequency circuits ·Uninterruptible power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 40 A IDM Drain Current-Single Plused 160 A PD Total Dissipation @TC=25℃ 220 W Tj Max.
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