Datasheet Details
| Part number | 40TPS12A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 155.98 KB |
| Description | Thyristors |
| Download | 40TPS12A Download (PDF) |
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| Part number | 40TPS12A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 155.98 KB |
| Description | Thyristors |
| Download | 40TPS12A Download (PDF) |
|
|
|
·With TO-247 packaging ·Long-term stability ·Thyristor for line frequency ·Planar passivated chip ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Line rectifying 50/60 Hz ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average forward current IT(RMS) RMS on-state current ITSM Surge non-repetitive on-state current ( 1/2 cycle,sine wave ) PG(AV) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature INCHANGE Semiconductor 40TPS12A MIN UNIT 1200 V 1200 V @Tc=79℃ 35 A 55 A 50HZ 500 60HZ 600 A 2.5 W -40~125 ℃ -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor 40TPS12A ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ VTM On-state voltage ITM= 110A MIN MAX UNIT 0.5 10 mA 1.85 V IGT Gate-trigger current VD = 6V 150 mA VGT Gate-trigger voltage VD = 6V 2.5 V Rth(j-c) Thermal resistance Junction to case 0.6 ℃/W NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
isc Thyristors.
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| 40TPS08A | Thyristor |