Datasheet Details
| Part number | 5NA80 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.89 KB |
| Description | N-Channel MOSFET |
| Download | 5NA80 Download (PDF) |
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| Part number | 5NA80 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.89 KB |
| Description | N-Channel MOSFET |
| Download | 5NA80 Download (PDF) |
|
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|
·Drain Current ID= 4.7A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current ,high speed switching ·Switch mode power supplies ·DC-AC converters for welding equipment and uninterruptible power supplies and motor drive ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4.7 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W 5NA80 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= 10V;
isc N-Channel MOSFET Transistor.
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