Datasheet Details
| Part number | 60N06-18 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 226.04 KB |
| Description | N-Channel MOSFET |
| Download | 60N06-18 Download (PDF) |
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| Part number | 60N06-18 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 226.04 KB |
| Description | N-Channel MOSFET |
| Download | 60N06-18 Download (PDF) |
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·High current capability ·Avalanche rugged technology ·Low gate charge ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Regulator ·High current,high speed switching ·Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 60 ID A Drain Current-continuous@ TC=100℃ 39 ID(puls) Pulse Drain Current 120 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.
Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case -55~175 ℃ MAX 1.25 UNIT ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor 60N06-18 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS;
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 60N06-18.
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