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70HFL80S05 Datasheet Preview

70HFL80S05 Datasheet

FAST RECOVERY DIODES

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70HFL80S05
FAST RECOVERY DIODES
FEATURES
·Shortreverse recovery time
·Low stored charge
·Wide currentrange
·Excellent surge capabilities
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·This range of fast recovery diodes is
designed for applications in DC power
supplies, inverters, converters, choppers,
ultrasonic systems and for use as a free
wheeling diode
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
CONDITIONS
VRRM
IF(AV)
Repetitive Peak Reverse Voltage
Average Forward Current
TC=75℃,
180° conduction, half sine wave
IF(RMS) Max. RMS forward current
IFSM
Surge Forward Current
t=10ms
t=8.3ms
t=10ms
t=8.3ms
No voltage
reapplied
100%VRRM
reapplied
I2t
I2t for fusing
t=10ms
t=8.3ms
t=10ms
t=8.3ms
No voltage
reapplied
100%VRRM
reapplied
TJ
Junction Temperature
Tstg
Storage Temperature
VALUE
800
70
110
700
730
830
870
2450
2240
3460
3160
-40~125
-40~150
UNIT
V
A
A
A
A2s
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




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70HFL80S05 Datasheet Preview

70HFL80S05 Datasheet

FAST RECOVERY DIODES

No Preview Available !

70HFL80S05
FAST RECOVERY DIODES
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
0.36
UNIT
K/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VFM
Forward Voltage drop
TJ = 25, IFM = πx IF(AV)
IR
Maximum Instantaneous Reverse Current VR= 800V@TJ = 25 °C
trr
Typical reverse recovery time
Qrr
Typical reverse recovered charge
TJ = 25, IF = 1 A to VR = 30 V,
dIF/dt = 100 A/μs
TJ = 25, - dIF/dt = 25 A/μs,
IFM = πx rated IF(AV)
TJ = 25, IF = 1 A to VR = 30 V,
dIF/dt = 100 A/μs
TJ = 25, - dIF/dt = 25 A/μs,
IFM = πx rated IF(AV)
PACKAGE OUTLINE
Dimensions in mm (1mm = 0.0394“)
MAX
1.85
100
150
500
UNIT
V
μA
ns
500
nC
1300
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 70HFL80S05
Description FAST RECOVERY DIODES
Maker INCHANGE
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70HFL80S05 Datasheet PDF






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