Datasheet Details
| Part number | 75N05E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 227.08 KB |
| Description | N-Channel MOSFET |
| Download | 75N05E Download (PDF) |
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Overview: isc N-Channel MOSFET Transistor ·.
| Part number | 75N05E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 227.08 KB |
| Description | N-Channel MOSFET |
| Download | 75N05E Download (PDF) |
|
|
|
·Drain Current ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation 75N05E ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 75 A ID(puls) Pulse Drain Current 200 A Ptot Total Dissipation@TC=25℃ 240 W Tj Max.
Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.625 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 80 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) 75N05E SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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75N05 | N-Channel MOSFET Transistor | Inchange Semiconductor |
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75N05 | SUB75N05 | Vishay |
| Part Number | Description |
|---|---|
| 75NF75 | N-Channel MOSFET |