Datasheet Details
| Part number | 75NF75 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 224.96 KB |
| Description | N-Channel MOSFET |
| Download | 75NF75 Download (PDF) |
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| Part number | 75NF75 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 224.96 KB |
| Description | N-Channel MOSFET |
| Download | 75NF75 Download (PDF) |
|
|
|
·Drain Current –ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.013Ω(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solenoid and relay drivers ·DC motor control ·DC-DC converters DC ·Automotive environment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage-Continuous ±20 V Drain Current-Continuous@TC=25℃ 75 ID A Drain Current-Continuous@TC=100℃ 60 IDM Drain Current-Single Pluse 300 A PD Total Dissipation @TC=25℃ 200 W TJ Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.65 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62 ℃/W 75NF75 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 0.25mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage VDS= VGS;
isc N-Channel MOSFET Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
75NF75 | POWER MOSFET | Estek Electronics |
| Part Number | Description |
|---|---|
| 75N05E | N-Channel MOSFET |