A0718 - PNP Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA

INCHANGE

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Datasheet Details

Part number	A0718
Manufacturer	INCHANGE
File Size	209.63 KB
Description	PNP Transistor
Datasheet	A0718 Datasheet
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isc Silicon PNP Power Transistor INCHANGE Semiconductor A0718 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.

Published: Sep 6, 2020 |