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A1441 - Silicon PNP Power Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -1A) Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -3A, IB=B -0.15A) APPLICATIONS This type of power transistor is developed for high-speed switching and

Key Features

  • a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. i. cnABSOLUTE.

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1441 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -1A) ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -3A, IB=B -0.15A) APPLICATIONS ·This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. i.cnABSOLUTE MAXIMUM RATINGS(Ta=25℃) .iscsemSYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V wwwVCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -5.0 A ICM Collector Current-Pulse -10 A IBB Base Current-Continuous -2.