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A1964 - Silicon PNP Power Transistor

General Description

Collector­Emitter Breakdown Voltage­  : V(BR)CEO= ­160V(Min)  Good Linearity of hFE  Wide Area of Safe Operation  Complement to Type 2SC5248  APPLICATIONS 

Power amplifier applications.

Driver stage amplifier applications.

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Full PDF Text Transcription for A1964 (Reference)

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INCHANGE Semiconductor Product Specification isc Silicon PNP Power Transistor 2SA1964 DESCRIPTION ·Collector­Emitter Breakdown Voltage­ : V(BR)CEO= ­160V(Min) ·Good Linea...

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ollector­Emitter Breakdown Voltage­ : V(BR)CEO= ­160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC5248 APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector­Base Voltage ­160 V VCEO Collector­Emitter Voltage ­160 V VEBO Emitter­Base Voltage ­5 V IC Collector Current­Continuous Collector Power Dissipation @Ta=25℃ ­1.5 A 2 W PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 20 150 ℃ Tstg Storage Temperature ­55~150 ℃ isc website：www.iscsemi.

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