Download ACTT4X-800E Datasheet PDF
Inchange Semiconductor
ACTT4X-800E
FEATURES - With TO-220F package - Suitables for general purpose where high surge current capability is required. Application such as phase control and tatic switching on inductive or resistive load. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) RMS on-state current (full sine wave)Tj=94℃ ITSM Non-repetitive peak on-state current tp=8.3ms Tj Operating junction temperature Tstg Storage temperature PG(AV) Average gate power dissipation(Tj=125℃) Rth(j-c) Thermal resistance, junction to case UNIT -45~125 ℃ -45~150 ℃ 2.05 ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM, VR=VRRM, Tj=125℃ IDRM Repetitive peak off-state current VD=VDRM, VD=VDRM, Tj=125℃ Ⅰ IGT Gate trigger current Ⅱ VD=12V; RL=...