Datasheet Details
| Part number | AD149 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.30 KB |
| Description | PNP Transistor |
| Datasheet |
 AD149 Datasheet
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| Part number | AD149 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.30 KB |
| Description | PNP Transistor |
| Datasheet |
AD149 Datasheet
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·Wide Area of Safe Operation ·DC Current Gain- : hFE=30-100@IC= -1A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.7V(Max)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power switch and amplifier, consumer and industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -3.5 A 30 W 200 ℃ Tstg Storage Temperature -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.52 UNIT ℃/W AD149 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| VALVO | AD149 | PNP Transistor | VALVO |
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AD149 | Germanium PNP Transistor | Telefunken |
| Part Number | Description |
|---|---|
| AD161 | NPN Transistor |
| AD162 | NPN Transistor |