Datasheet Details
| Part number | AD161 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.23 KB |
| Description | NPN Transistor |
| Datasheet |
 AD161 Datasheet
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| Part number | AD161 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.23 KB |
| Description | NPN Transistor |
| Datasheet |
AD161 Datasheet
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·Wide Area of Safe Operation ·DC Current Gain- : hFE=50-350@IC= 0.5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power switch and amplifier, consumer and industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 32 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 3 A 4 W 90 ℃ Tstg Storage Temperature -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.52 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
isc Silicon NPN Power Transistor AD161.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AD161 | Germanium NPN Transistor | Siemens |
| Part Number | Description |
|---|---|
| AD162 | NPN Transistor |
| AD149 | PNP Transistor |